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About EAG

Lab Director

Dr. Sanjay Patel

Dr. Sanjay Patel
Director of Analytical Services, Arizona

Dr. Patel’s area of specialty is quadrupole SIMS and has been involved in the field for over 15 years. His analytical research involves characterization of thin/shallow structures using low energy SIMS.

He received his BSc in Physics from King’s College, London University in 1989 and later received an MSc and PhD from Imperial College, London University.

In 1996, he joined Atomika Instruments in Germany as a SIMS Application Scientist, where he was involved with optimizing SIMS parameters for new and challenging materials. In 2000, he became Technical Marketing Manager at Atomika Instrument’s US branch, where he provided technical sales support and worked closely with customers to help improve the accuracy and repeatability of their SIMS measurements. From 2003 to 2006 he was Arizona Laboratory Manager for Materials Analytical Services, where he helped start the facility and grow the quadrupole SIMS business.

Publications

  • "Charge compensation using optical conductivity enhancement and simple analytical protocols for SIMS of resistive Si1-xGex alloy layers" – M.G.Dowsett, R.Morris, P.F.Chou, S.F.Corcoran, H.Kheyrandish, G.A.Cooke, J.L.Maul, S.B.Patel, Applied Surface Science 203: 500-503 JAN 15 2003

  • "Peak or centroid - which parameter is better suited for quantifying apparent marker locations in low-energy sputter depth profiling with reactive primary ion beams?" - K.Wittmaack, E.Hammer, I.Eisele, S.B.Patel, Surface And Interface Analysis 31 (9): 893-896 SEP 2001

  • "Optimization of SIMS analysis conditions for ultra-shallow phosphorus and arsenic implants" - J.L.Hunter, T.B.Bates, S.B.Patel, R.Loesing, G.Guraynov, D.P.Griffis, Microbeam Analysis 2000, Proceedings Institute Of Physics Conference Series (165)327-328 2000

  • "Dose calibration for through-oxide doping distributions from time-dependent secondary-ion-mass-spectrometry depth profiles with only one sensitivity factor" – K.Wittmaack, J.J.Lee, S.B.Patel, Applied Physics Letters 74 (26): 3969-3971 JUN 28 1999

  • "In search of optimum conditions for the growth of sharp and shallow B-delta markers in Si by molecular beam epitaxy" – K.Wittmaack, J.Griesche, H.J.Osten, S.B.Patel, Journal of Vacuum Science & Technology B 18 (1): 524-528 JAN-FEB 2000

  • "Response Function During Oxygen Sputter Profiling For Deconvolution of Boron Spatial Distribution" - L.Shao, J.R.Liu, C.Wang, K.B.Ma, J.M.Zhang, J.Chen, D.Tang, S.Patel, W.K.Chu, Nuclear Instruments & Methods In Physics Research Section B-Beam Interactions With Materials And Atoms 219: 303-306 JUN 2004

  • "The Advantages of Normal Incidence Ultra-Low Energy Secondary Ion Mass Spectrometry Depth Profiling" – T.J.Ormsby, D.P.Chu, M.G.Dowsett, G.A.Cooke, S.B.Patel, Applied Surface Science 145: 292-296 APR 1999

  • "A SIMS Study of The Altered Layer In Si Using 18O2 Primaries At Various Angles Of Incidence" – G.P.Beyer, S.B.Patel, J.A.Kilner, Nuclear Instruments & Methods In Physics Research Section B-Beam Interactions With Materials And Atoms 85 (1-4): 370-373 MAR 1994

  • "The New Atomika SIMS 4500 for Shallow Junction Profiling by eV-Primary Ion Beams" - J.L. Maul and S.B. Patel, Proceedings of the 11th International Conference on Secondary Ion Mass Spectrometry, John Wiley & Sons, pp 707-710, 1997.

  • "Precise, Fast and Accurate Depth Profiling of sub-keV to MeV B Implants in Si" - S.B.Patel, A.Sears and J.L.Maul, , 1998 International Conference on Ion Implantation Technology Proceedings, 955-958 vol.2.

  • "Process and Materials Characterization Using Low Energy Secondary Ion Mass Spectrometry (SIMS)" – S.Lu and S.B.Patel, Proceedings 6th International Conference on Solid-State and Integrated-Circuit Technology, 2001, 1054- 1057 vol.2

  • "The New Atomika SIMS 4600 for Full 200/300 mm Wafers" - J.L.Maul, S.B.Patel, A.Sears, N.Loibl, L.Bögl and M.Dowsett, Proceedings of the 12th International Conference on Secondary Ion Mass Spectrometry, Brussels, Belgium, 5 - 10 September 1999, p237-240

  • "The Altered Layer Created by Ultra Low Energy Oxygen Bombardment at Normal Incidence" - M.G.Dowsett, S.B.Patel and G.A.Cooke, Proceedings of the 12th International Conference on Secondary Ion Mass Spectrometry, Brussels, Belgium, 5 - 10 September 1999, p85-88

  • "Surface analysis of archaeological obsidian by SIMS" – S.B.Patel, R.E.M.Hedges and J.A.Kilner, J ARCHAEOL SCI, 1998, Vol: 25, Pages: 1047 - 1054

  • "Effects of sample charging on secondary ion energy distributions" - S.B.Patel, J.A.Kilner, D.S.McPhail, Proceedings of the 9th International Conference on Secondary Ion Mass Spectrometry, Pages: 104-107 Yokohama, Japan, John Wiley & Sons 1994, 1993

  • "Fast low energy SIMS depth profiling for ULSI applications" - S.B.Patel and J.L.Maul, Conference Proceedings - Characterization and Metrology for ULSI Technology : 1998 International Conference (Aip Conference Proceedings), Volume 449, pp. 782-785

  • "Comparison between ex-situ and in-situ analysis of the altered layer in Si produced by 18O2+ primaries" – G.P.Beyer, S.B.Patel, J.A.Kilner, Proceedings of the 9th International Conference on Secondary Ion Mass Spectrometry, Pages: 658-661 Yokohama, Japan, John Wiley & Sons 1994, 1993

  • "Quantification of the oxygen distribution in SIMOX substrates using Xe+, Cs+ and N2+ primary beams" – S.B.Patel and J.A.Kilner,J.A, Proceedings of the 8th International Conference on Secondary Ion Mass Spectrometry, Pages: 107-110, The Netherlands, John Wiley & Sons 1992, 1991

  • "In-situ studies of the 18O bombardment of thermal silicon dioxide" - J.A.Kilner, R.J.Chater, S.B.Patel and G.P.Beyer, Proceedings of the 9th International Conference on Secondary Ion Mass Spectrometry, Pages: 613-616 Yokohama, Japan, John Wiley & Sons 1994, 1993