Rutherford Backscattering Spectrometry, RBS Analysis

Rutherford Backscattering Spectrometry (RBS) is an ion scattering technique used for compositional thin film analysis. RBS is unique in that it allows quantification without the use of reference standards. During an RBS analysis, high-energy (MeV) He²⁺ ions (i.e. alpha particles) are directed onto the sample and the energy distribution and yield of the backscattered He²⁺ ions at a given angle is Rutherford Backscattering Spectrometry (RBS) technique from Evans Analytical Group (EAG). measured. Since the backscattering cross section for each element is known, it is possible to obtain a quantitative compositional depth profile from the RBS spectrum obtained, for films that are less than 1μm thick.

Rutherford Backscattering Spectrometry, RBS Analysis by EAG Evans Analytical Group® (EAG) has world-class experience in analyzing thin films using RBS, with both pelletron and tandetron instrumentation. EAG's experience in the analysis of all types of semiconductor thin films (oxides, nitrides, silicides, high and low-K dielectrics, metal films, compound semiconductors and dopants) enables fast turnaround times, accurate data, and high quality person-to-person service.