Transmission Electron Microscopy (TEM) and Scanning Transmission Electron Microscopy (STEM)
Transmission Electron Microscopy (TEM) and Scanning Transmission Electron Microscopy (STEM) are closely related techniques that use an electron beam to image a sample. High energy electrons, incident on ultra-thin samples allow for image resolutions that are on the order of 1-2Å. Compared to SEM, TEM and STEM have better spatial resolution and are capable of additional analytical measurements, but require significantly more sample preparation.
Although more time consuming than many other common analytical tools, the wealth of information available from TEM and STEM analyses is impressive. Not only can outstanding image resolution be obtained, it is also possible to characterize crystallographic phase, crystallographic orientation (by diffraction mode experiments), produce elemental maps (using EDS or EELS), and obtain images that highlight elemental contrast (dark field mode). These can all be done from nm sized areas that can be precisely located. STEM and TEM are the ultimate failure analysis tools for thin film and IC samples.
Please click here to learn about EAG's EMview software for SEM, FIB, TEM, and STEM data processing and display.
Request More Information on EAG's TEM/STEM Analysis Services
- Identification of nm sized defects on integrated circuits, including embedded particles and residues at the bottom of vias.
- Determination of crystallographic phases as a function of distance from an interface.
- Nanoparticle characterization: Core/shell investigations, agglomeration, effects of annealing...
- Catalyst support coverage.
- Ultra small area elemental maps.
- III-V super lattice characterization
- Crystal defect characterization
Signal Detected: Transmitted electrons, scattered electrons, secondary electrons, x-rays
Elements Detected: B-U (EDS)
Detection Limits: 0.1-1at%
Imaging/Mapping: Yes (EDS, EELS)
Ultimate Lateral Resolution: <0.2nm
- The ultimate elemental mapping resolution of any analytical technique.
- Sub 0.2nm (2Å) image resolution.
- Small area crystallographic information
- Significant sample preparation time
- Samples are often prepared that are <100nm
- Some materials not stable to electron beam
- Compound Semiconductors
- Intergrated circuit
- Magnetic media
Related Application Notes
- Two-dimensional Mapping of Matrix Elements in a Microelectronic Device by Scanning Transmission Electron Microscopy-Electron Energy Loss Spectroscopy (STEM-EELS) AN464
- Rapid Defect Typing in GaN Using a Dedicated Scanning Transmission Electron Microscope (STEM) AN463
- Imaging of Nanoparticles by TEM AN462
- Z-Contrast Imaging and Elemental Analysis of Ultra-thin Films utilizing Scanning Transmission Electron Microscopy (STEM) with Energy Dispersive X-ray Spectroscopy (EDS) AN461
- CdTe Thin Film PV - Application Discussion BR047
- CIGS Thin Film PV - Application Discussion BR045
- Accurate Thin Film Measurements by High-Resolution Transmission Electron Microscopy (HRTEM) AN451
- Electron Energy Loss Spectroscopy (EELS) Characterization of an UItrathin Multilayer Film AN450
- EAGLABS Bubble Chart: Analytical Resolution versus Detection Limit BR004
- Materials Characterization Brochure
- PV Materials Characterization for CIGS BR053
- PV Silicon Impurity Analysis BR025
- LED Brochure BR061
- Electron Microscopy Services BR018
- Materials Characterization for Lithium Ion Battery Technology BR057
- PV Materials Characterization for CdTe BR054
- Typical Applications for Techniques / Periodic Table of Elements BR038
- Amorphous & MicrocrystallineThin Film PV - Application Discussion BR046
- III-V Multi-Junction PV - Application Discussion BR048
- Silicon Wafer PV - Application Discussion BR044
- EAGLABS Transmission Electron Microscopy (TEM) and Scanning Transmission Electron Microscopy (STEM) Services TN110
- Your Solution for PV Materials Characterization BR032
- Compound Semiconductors for Optoelectronics - SIMS Analytical Services BR010
- Contamination Analysis for Compound Semiconductors - Analytical Services BR006
- EAG Services Introduction BR011
- EAG Technique Chart BR008