Secondary Ion Mass Spectrometry, SIMS Analysis

Secondary Ion Mass Spectrometry (SIMS) detects very low concentrations of dopants and impurities. It can provide elemental depth profiles over a depth range from a few angstroms (Å) to tens of microns (µm). The sample of interest is sputtered/etched with a beam of primary ions (usually O or Cs). Secondary ions formed during the sputtering process are extracted and analyzed using a mass spectrometer (usually a quadrupole or magnetic sector). The secondary ions can range in concentration from matrix levels down to sub-ppm trace levels.

Evans Analytical Group® (EAG) is the industry standard for commercial SIMS analysis, offering the best detection limits along with accurate concentration and layer structure identification. EAG's depth and breadth of experience and dedication to research and development in the SIMS field is unmatched. EAG has the largest range of SIMS instruments worldwide (more than 40), staffed by highly qualified scientists. EAG also has the world's largest reference material library of ion-implanted and bulk-doped standards for accurate SIMS quantification.

EAG's analysts are adept at understanding our client's needs and designing relevant analyses to most effectively address their concerns and interests. EAG regularly uses SIMS analysis to help customers across a range of industries with R&D, quality control, failure analysis, troubleshooting, and process monitoring. EAG provides person-to-person service throughout the process, to allow a full understanding of the test results.

EAG's SIMSview™: SIMS Data Processing Software

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