Semiconductor
Evans Analytical Group® (EAG) is the world-leading materials characterization resource for the semiconductor industry. EAG was originally founded to provide analytical services to the semiconductor industry and we have stayed true to our roots throughout our lifetime. Our surface and bulk analytical services are dedicated to providing the best information to add value to our customers in this sector.
In parallel with the Materials Characterization division, our Microelectronics Test and Engineering division supports the testing of prototype devices in the ramp towards full scale production.
Our surface and microanalytical techniques are critical in the following areas:
- Developing new processes
- Characterizing ongoing processes
- Reducing development time
- Transferring processes to production
- Ensuring the purity of starting materials
- Qualifying new production tools
- Solving yield-reducing production problems
Application Examples
- Measuring the thickness, density, and composition of films
- Assessing the cleaning efficacy by quantifying surface metals on Si wafers
- Characterizing dopant dose and profile shape
- Identifying and locating trace level impurities in semiconductor stacks
- Examining the cross-sectional structure of IC's
- Identifying particle contamination
- Identifying organic contamination on Si wafers
- Visualizing film morphology
- Identifying wafer haze and discoloration
- Quantifying bulk dopants or impurities
Related Application Notes
- FEI DualBeamTM FIB AN364
- Characterizing Annealed ULE B Implants using EAGLABS PCOR-SIMS AN434
- Measuring Ultra-low Energy Boron Implants using EAGLABS PCOR-SIMS AN438
- Composition and Mapping of GeSbTe (GST) Films Using Low Energy X-ray Emission Spectrometry (LEXES) AN455
- Identification of Interface Contamination Using Field Emission Auger Electron Spectroscopy (FE-AES) AN445
- SIMS Detection Limits for Selected Impurities in Si Bulk Conditions AN444
- ICP-OES and ICP-MS Detection Limit Guidance BR023
- Accurate Dosimetry for High Dose Plasma Implanted Boron using EAGLABS PCOR-SIMS AN435
- Advanced Surface Analysis for Problem-Solving in Flat Panel Display Manufacturing AN443
- Characterization of Surface Contamination BN1365
- Evaluating Polymer Cure Using Raman Spectroscopy BN1394
- Evaluation of Cleaning Efficacy BN1422
- Grain Size Analysis of Metallurgical Coatings Using FIB BN1345
- Medical Device Electronics: Improving Reliability with Auger Electron Spectroscopy BN1501
- SiC 4" Whole Wafer Analysis AN436
- SIMS Analysis of Individual Particles in SiC Powder Sample AN437
- Accuracy in SiON Thickness and N Dose Measurements by XPS AN412
- Advanced SiGe SIMS Analyses, As in SiGe AN359
- Analysis of a 0.2 µm Surface Defect Auger Electron Spectroscopy vs. Energy Dispersive X-ray Spectroscopy AN342
- Analysis of a 0.3 µm Surface Defect Auger Electron Spectroscopy vs. Energy Dispersive X-ray Spectroscopy AN341
- Automated Particle Analysis by SEM/EDS AN379
- Backside SIMS AN418
- Characterization of Amorphous Silicon Using Secondary Ion Mass Spectrometry (SIMS) AN427
- Characterization of Oxidized GaAs Wafers by XPS AN377
- Characterization of Surface Aluminum Contamination on Processed Silicon Wafers Using SurfaceSIMS.XP AN393
- Compositional Defect Review on the 300mm Whole Wafer SMART-Tool and 200mm Whole Wafer SMART-200 Differentiates Particles that Look Alike but Originate From Different Sources AN429
- Depth Profile Characterization of Low-K Materials Using Secondary Ion Mass Spectrometry AN433
- Detection Limits for Surface Metals on Patterned Wafers Using SurfaceSIMS AN428
- Detection of Threading Dislocations in Strained Si Using AFM AN409
- Determination of SiGe Stoichiometry AN417
- Hafnium Oxide (HfO2) Composition and Stoichiometry AN400
- High Depth Resolution SIMS of Strained Si in Si/SiGe AN408
- High Depth Resolution SIMS Profiles for Compound Semiconductor Devices AN374
- High-k Film Analysis by RBS and NRA AN383
- Identification of Buried Carbon Contamination Using Auger and FIB on the 300mm Whole Wafer SMART-ToolTM AN430
- Identification of Fluorocarbon Flower Defects by Auger Measurements on the 300mm Whole Wafer SMART-ToolTM AN431
- Identification of Stainless Steel Particles Using Auger and FIB on Whole Wafer SMART-ToolTM and SMART-200TM Systems AN432
- Identifying Contaminants Using Raman: Organic Particles AN376
- Identifying Contaminants: Fiber Found On A Wafer AN362
- Identifying Contaminants: White Powder on Electrical Pins AN375
- Improved Characterization of Diffusion in Ohmic Contacts on an AIGaAs Laser Diode using Backside SIMS AN386
- Improved Characterization of Interface Contamination in a Laser Diode using Backside SIMS AN387
- Improved Detection Limits in SIMS Measurements of SiC AN358
- Improved Precision in SIMS Measurements of B, Al, and N in SiC AN357
- Micro-Analytical Evaluation of Via Etch Processes and Post-Etch Cleaning Procedures AN344
- N Distribution in SiON Gate Dielectrics Using TOF-SIMS AN414
- Nuclear Reaction Analysis (NRA) for Li, B, C, N, O and F AN381
- Organic Contamination on Optical Surfaces AN346
- Organic Contamination on Surfaces AN378
- Oxide Thickness Measurements by Electron Spectroscopy for Chemical Analysis AN425
- Physical and Chemical Characterization of Multi-layer Thin Films AN353
- Process Control Using SIMS for Compound Semiconductors AN373
- Proper SIMS Quantification of Boron in SiGe structures: Comparison of Cs and O Ion Beam Bombardment AN401
- Quantitative Damage Profiles By Ion Channeling AN382
- Raman Mapping of Strained Si/SiGe AN407
- Residual Copper Analysis on CMP Wafers AN361
- Reverse Engineering of Compound Semiconductor Optoelectronics AN419
- Semiconductor Stress Measurements by Raman Spectroscopy AN395
- Si1-xGex Characterization by RBS AN403
- SIMS Analysis of Small Area Device Samples AN343
- SIMS Analysis of Small Area SiGe Device Samples AN360
- SIMS Detection Limits of Selected Elements in GaAs Under Normal Depth Profiling Conditions AN371
- SIMS Detection Limits of Selected Elements in GaN Under Normal Depth Profiling Conditions AN370
- SIMS Detection Limits of Selected Elements in InP Under Normal Depth Profiling Conditions AN369
- SIMS Detection Limits of Selected Elements in ZnO Under Normal Depth Profiling Conditions AN426
- SIMS Measurement of Bulk [N] in Nitrogen-doped Cz-Si: Long Term Precision Results AN411
- • SIMS Quantification for Compound Semiconductors AN372
- Strained Si - Surface Morphology Measured by AFM AN402
- Thin Film Hafnium Oxide (HfO2) Thickness, Composition, and Uniformity Measurements by XPS AN415
- Thin Film Hafnium Silicate (HfSiO) Thickness and Composition Measurements by XPS AN416
- TXRF and SURFACESIMS.XP The Total Solution For Surface Contamination Measurements AN363
- Whole Wafer Analysis Using TOF-SIMS AN368
- Characterization Methods for Copper Technology AN192
- Cleanroom Materials as Sources of Airborne Molecular Contamination AN182
- Evaluating Bond Pad Performance AN332
- Fast Elemental Identification of Submicron Defects by AES Leads to Yield Enhancement AN340
- Semiconductor Structural Studies by Raman Spectroscopy AN334
- SIMS Detection Limits of Selected Elements in HgCdTe Under Normal Depth Profiling Conditions AN338
- SIMS Detection Limits of Selected Elements in Si and SiO2 Under Normal Depth Profiling Conditions AN339
- SIMS Detection Limits of Selected Elements in SiC Under Normal Depth Profiling Conditions AN337
- Surface Metal Contamination on Patterned Wafers AN221
Related Brochures
- PCOR-SIMS - Improved Profile Accuracy
- EBSD Services Technique Note
- EAGLABS Bubble Chart: Analytical Resolution versus Detection Limit BR004
- Materials Characterization Brochure
- Electron Microscopy Services BR018
- Typical Applications for Techniques / Periodic Table of Elements BR038
- Bulk Elemental Analysis BR021
- Your Solution for PV Materials Characterization BR032
- Compound Semiconductor High Speed Electronics - SIMS Analytical Services BR009
- Compound Semiconductors for Optoelectronics - SIMS Analytical Services BR010
Related Papers
- Dose and Oxide Thickness Determination by XPS of Plasma-Implanted P in Si - W. Nieveen PS709
- SIMS Measurements of Metal Contamination in SOI - M.H. Yang; A. Wang; M. Neuburger; R.S. Hockett PS707
- Interface Oxides in Ozone-Based ALD Grown High-K Dielectric Layers on Si - W. Nieveen PS704
- Characterization of Amorphous Silicon by Secondary Ion Mass Spectrometry - Y. Li; S. Wang; X. Lin; L. Wei PS701
- Measurements of Ti-Containing Barrier Materials and Low-K Dielectric Films Using Backside Polishing SIMS - M.H. Yang; J. Lan; I. Mowat; R. Humayun; J. Sun PS706
- The Unique Application of AFM/SCM-2D-Carrier Profiling Through Thick Insulating Layers - K. Chao PS702




