Time-of-Flight Secondary Ion Mass Spectrometry, TOF-SIMS Analysis

Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS) is a surface analytical technique that focuses a pulsed beam of primary ions onto a sample surface, producing secondary ions in a sputtering process. Analyzing these secondary ions provides information about the molecular and elemental species present on the surface. For example, if there Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS) Analysiswere organic contaminants, such as oils adsorbed on the surface, TOF-SIMS would reveal this information, whereas other techniques may not. Since TOF-SIMS is a survey technique, all the elements in the periodic table, including H, are detected. Moreover, TOF-SIMS analysis can provide mass spectral information; image information in the XY dimension across a sample; and also depth profile information on the Z dimension into a sample.

The surface sensitivity of TOF-SIMS makes it a good first pass at problem solving. Once you have an idea of what you are dealing with, you can then use other techniques to obtain additional information.

Evans Analytical Group® (EAG) has been doing TOF-SIMS commercially longer than any TOF-SIMS Analysis by EAGother company; our expertise is second to none. This is particularly crucial for TOF-SIMS, where the data sets can be extremely complex and may require more interpretation or data processing than other analytical techniques. The imaging capabilities of TOF-SIMS can provide elemental and molecular information from defects and particles on the micron scale. TOF-SIMS can also be used for depth profiling and compliments dynamic SIMS. The advantages for TOF-SIMS for profiling are its small areas capabilities and also its ability to do survey depth profiles.

At EAG, we use TOF-SIMS to assist customers with quality control, failure analysis, troubleshooting, process monitoring, and research and development. For example, the information we provide when investigating wafer surface contamination issues can help determine the specific source of the problem, such as pump oils or component outgassing, or it may indicate problems with the wafer-processing step itself (e.g. etch residue). We also make sure you have person-to-person service throughout the process, so that you understand the test results and their implications.

  • Surface microanalysis of organic and inorganic materials
  • Mass spectra direct from surfaces
  • Ion imaging of surfaces

Signal Detected: Molecular and elemental species

Elements Detected: Full periodic table coverage, plus molecular species

Detection Limits: 107 - 1010 at/cm2 sub-monolayer

Depth Resolution: 1-3 monolayers (Static mode)

Imaging/Mapping: Yes

Lateral Resolution/Probe Size: ~0.20µm

  • Specific molecular information on thin (sub-monolayer) organic films/contaminants
  • Surface analysis that allows more complete characterization of a surface
  • Excellent detection limits (ppm) for most elements
  • Quantitative element analysis of Si and GaAs
  • Probe size ~0.2 µm for imaging
  • Insulator and conductor analysis
  • Non-destructive
  • Depth profiling is possible
  • Whole wafers up to 200 mm
  • Usually not quantitative without standards
  • Samples must be vacuum compatible
  • It can be too surface sensitive:
    • Sample packaging and prior handling may impact quality of results
    • Analysis order is important, surface-damaging tests should be done after TOF-SIMS
  • Very surface specific -- only examines top couple of monolayers
  • Aerospace
  • Automotive
  • Biomedical/biotechnology
  • Compound Semiconductor
  • Data Storage
  • Defense
  • Displays
  • Electronics
  • Industrial Products
  • Lighting
  • Pharmaceutical
  • Photonics
  • Polymer
  • Semiconductor
  • Solar Photovoltaics
  • Telecommunications
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