Time-of-Flight Secondary Ion Mass Spectrometry, TOF-SIMS Analysis
Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS) is a surface analytical technique that focuses a pulsed beam of primary ions onto a sample surface, producing secondary ions in a sputtering process. Analyzing these secondary ions provides information about the molecular and elemental species present on the surface. For example, if there
were organic contaminants, such as oils adsorbed on the surface, TOF-SIMS would reveal this information, whereas other techniques may not. Since TOF-SIMS is a survey technique, all the elements in the periodic table, including H, are detected. Moreover, TOF-SIMS analysis can provide mass spectral information; image information in the XY dimension across a sample; and also depth profile information on the Z dimension into a sample.
The surface sensitivity of TOF-SIMS makes it a good first pass at problem solving. Once you have an idea of what you are dealing with, you can then use other techniques to obtain additional information.
Evans Analytical Group® (EAG) has been doing TOF-SIMS commercially longer than any
other company; our expertise is second to none. This is particularly crucial for TOF-SIMS, where the data sets can be extremely complex and may require more interpretation or data processing than other analytical techniques. The imaging capabilities of TOF-SIMS can provide elemental and molecular information from defects and particles on the micron scale. TOF-SIMS can also be used for depth profiling and compliments dynamic SIMS. The advantages for TOF-SIMS for profiling are its small areas capabilities and also its ability to do survey depth profiles.
At EAG, we use TOF-SIMS to assist customers with quality control, failure analysis, troubleshooting, process monitoring, and research and development. For example, the information we provide when investigating wafer surface contamination issues can help determine the specific source of the problem, such as pump oils or component outgassing, or it may indicate problems with the wafer-processing step itself (e.g. etch residue). We also make sure you have person-to-person service throughout the process, so that you understand the test results and their implications.
- Surface microanalysis of organic and inorganic materials
- Mass spectra direct from surfaces
- Ion imaging of surfaces
Signal Detected: Molecular and elemental species
Elements Detected: Full periodic table coverage, plus molecular species
Detection Limits: 107 - 1010 at/cm2 sub-monolayer
Depth Resolution: 1-3 monolayers (Static mode)
Imaging/Mapping: Yes
Lateral Resolution/Probe Size: ~0.20µm
- Specific molecular information on thin (sub-monolayer) organic films/contaminants
- Surface analysis that allows more complete characterization of a surface
- Excellent detection limits (ppm) for most elements
- Quantitative element analysis of Si and GaAs
- Probe size ~0.2 µm for imaging
- Insulator and conductor analysis
- Non-destructive
- Depth profiling is possible
- Whole wafers up to 200 mm
- Usually not quantitative without standards
- Samples must be vacuum compatible
- It can be too surface sensitive:
- Sample packaging and prior handling may impact quality of results
- Analysis order is important, surface-damaging tests should be done after TOF-SIMS
- Very surface specific -- only examines top couple of monolayers
- Aerospace
- Automotive
- Biomedical/biotechnology
- Compound Semiconductor
- Data Storage
- Defense
- Displays
- Electronics
- Industrial Products
- Lighting
- Pharmaceutical
- Photonics
- Polymer
- Semiconductor
- Solar Photovoltaics
- Telecommunications
Related Application Notes
- Chemical Imaging of Pharmaceuticals AN466
- CdTe Thin Film PV - Application Discussion BR047
- CIGS Thin Film PV - Application Discussion BR045
- Advanced Surface Analysis for Problem-Solving in Flat Panel Display Manufacturing AN443
- Identification of Precipitates in Biological Tissue BN1505
- Imaging Cross-Sections by TOF-SIMS BN1355
- Microtomy Advantages for Cross-sectioning Materials BN1399
- N Distribution in SiON Gate Dielectrics Using TOF-SIMS AN414
- Organic Contamination on Surfaces AN378
- Residual Copper Analysis on CMP Wafers AN361
Related Brochures
- EAGLABS Bubble Chart: Analytical Resolution versus Detection Limit BR004
- Materials Characterization Brochure
- PV Materials Characterization for CIGS BR053
- PV Silicon Impurity Analysis BR025
- Materials Characterization for Lithium Ion Battery Technology BR057
- PV Materials Characterization for CdTe BR054
- Typical Applications for Techniques / Periodic Table of Elements BR038
- Biomedical Service Brochure BR003
- Amorphous & MicrocrystallineThin Film PV - Application Discussion BR046
- III-V Multi-Junction PV - Application Discussion BR048
- EAGLABS Time-of-Flight SIMS (TOF-SIMS) Services TN104
- Your Solution for PV Materials Characterization BR032
- Compound Semiconductors for Optoelectronics - SIMS Analytical Services BR010
- Contamination Analysis for Compound Semiconductors - Analytical Services BR006
- EAG Services Introduction BR011
- EAG Technique Chart BR008




