Total Reflections X-ray Fluorescence (TXRF)
Total Reflection X-ray Fluorescence (TXRF) utilizes extremely low-angle x-ray excitation of a polished sample surface. The incident angle of the x-ray beam (typically 0.05°) is below the critical angle for the substrate and limits 
excitation to the outer most surface layers of the sample. The fluorescence photons emitted from the surface atoms are characteristic of the 
elements present.
A highly surface-sensitive technique, TXRF is optimized for analyzing surface metal contamination on semiconductor wafers.
- Metallic surface contamination on semiconductor wafers
Signal Detected: Fluorescent x-rays from wafer surface
Elements Detected: S-U
Detection Limits: 109 - 1012 at/cm2
Depth Resolution: 30 - 80 Angstrom (Sampling Depth)
Imaging/Mapping: Optional
Lateral Resolution/Probe Size: ~10 mm
- Trace element analysis
- Survey analysis
- Quantitative
- Non-destructive
- Automated analysis
- Whole wafer analysis (up to 300 mm)
- Cannot detect low-Z elements (Li, Na, Al)
- Polished surface required for best detection limits
- Semiconductor
- Telecommunication
- Compound Semiconductors
- Solar Photovoltaics
Related Application Notes
Related Brochures
- EAGLABS Bubble Chart: Analytical Resolution versus Detection Limit BR004
- Materials Characterization Brochure
- PV Silicon Impurity Analysis BR025
- LED Brochure BR061
- Typical Applications for Techniques / Periodic Table of Elements BR038
- Biomedical Service Brochure BR003
- Compound Semiconductors for Optoelectronics - SIMS Analytical Services BR010
- Contamination Analysis for Compound Semiconductors - Analytical Services BR006
- EAG Services Introduction BR011
- EAG Technique Chart BR008
