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Analytical Techniques for PV Si Feedstock Evaluation

Dick Hockett

"The specific elemental impurities that need to be evaluated in feedstock depends, to some extent, upon the process to make the solar wafer and the solar cell design and processing."

- Dr. Richard S. Hockett, Chief Scientist, from his presentation at the National Renewable Energy Laboratory (NREL) 18th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, August 2008

Surface analytical techniques can provide valuable insight into photovoltaic materials and their processing, showing how they correlate to device performance. This information can then be used to reduce contamination and defects and improve manufacturing processes, thus increasing yields and lowering costs.

Below are three papers that describe some of the challenges of PV Si materials development and some of the possible approaches to better understanding those materials.

Analytical Techniques for PV Si Feedstock Evaluation
- R. S. Hockett

Quantitative Measurement of Dopants (SUB-PPBA), Oxygen, and Carbon (SUB-PPMA), and Metals (SUB-PPMA) in PV Si Feedstock and Wafers by SIMS
- L. Wang and R. Hockett

Production Support and Process Control of PV Materials by Direct Sampling High-Resolution Glow Discharge Mass Spectrometry Methods
- C. Michellon, K. Putyera, M. Kasik and R. Hockett

 

Application Examples

  • Accurately measuring layer composition in materials including c-Si, α-SiGe, CdTe, CIGS, III-V, TCO and more
  • Characterizing dopants
  • Identifying and locating trace level impurities in layers and at interfaces
  • Identifying grain structure differentiating between c-Si, α-Si and poly-Si
  • Measuring average grain size in thin poly-Si films
  • Examining the cross-sectional structure, orientation, layer thickness and film integrity
  • Identifying particle contamination
  • Identifying organic contamination
  • Assessing the cleaning efficacy of surface metals on Si wafers

Application Notes