EAG Papers - By Technique

Subcategory: Select category All categories AES Channeling FTIR GC/MS GDMS HFS NRA PIXE Raman RBS SEM SIMS SPM/AFM TEM/STEM TOF-SIMS TXRF XPS/ESCA XRD XRF XRR

• 5.0 Contamination Measurement: Materials and Process Characterization of Ion Implantation - R.S. Hockett; J. Metz; M.K. Balazs; D.C. Gupta; C.T. Larson; K.M. Takahashi; D.J. McKee; R. Burghard PA019
• A Correlation of TOF-SIMS and TXRF for the Analysis of Trace Metal Contamination on Gallium Arsenide - I. Mowat; P. Lindley; L. McCaig PA090
• A Practical Approach for Removing Knock-On Effects in SIMS Depth Profiles - M. Yang; Y. Li; C. Hitzman; R. Odom PA040
• A Review of Analytical Techniques for Process Control of Contaminants Introduced During Ion Implantation - S. Biswas; I. Kelly PA009
• A Review of Analytical Techniques for Process Control of Contaminants Introduced During Ion Implantation - S. Biswas; I. Kelly PA057
• A Study of Electron Beam Evaporated SiO₂, TiO₂, and Al₂O₃ Films Using RBS, HFS, and SIMS - S.M. Baumann; C.C. Martner; D.W. Martin; R.J. Blattner; A.J. Braundmeier, Jr. PA081
• Accuracy of secondary ion mass spectrometry in determining ion implanted B doses as confirmed by nuclear reaction analysis - C.W. Magee; D. Jacobson; H. Gossman PA002
• Accurate Characterization of Dose and Shape of Ultra Low Energy Arsenic (1keV and 2 keV) Implants by SIMS - S. Biswas; C.P.A. Mulcahy; P. Banks and Eric Collart PA107
• Accurate Determination of the Matrix Composition Profile of Hg1-xCdxTe by Secondary Ion Mass Spectrometry - L. Wang; A. Wang; S. Price PA114
• An Evaluation of HIBS Analytical Capabilities for Measuring Surface Metal Contamination on Silicon Surfaces - S.M. Baumann; R.S. Hockett PA029
• An Update on Standards Activity for TXRF and the Challenges Ahead - R.S. Hockett PA076
• Analysis of Cleanroom Airborne Molecular Contamination by TOF-SIMS - G. Goodman; P. Schnabel; L. McCaig; P. Lindley; T. Schuerlein PA003
• Analysis of Organic Contaminants in Gases Using Non-Volatile Residue (NVR) Monitors and Time-Of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS) - P.M. Lindley; J.J. Lee, W.D. Bowers, G.S. Strossman; R.S. Hockett PA005
• Analysis of Submicron Al and Al₂O₃ Particles by Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS) - P.M. Lindley; B.W. Schueler; A.C. Diebold; R.S. Hocket; G. Mulholland PA004
• Analysis of Submicron Defects by Auger Electron Spectroscopy (AES) - J. Scherer; P. Schnabel; K. Childs PA082
• Analysis of Trace Impurities on Wafers From Cleaning - R.S. Hockett PA017
• Analytical Methods for Nanotechnology PA109
• Analytical Techniques for Measuring Contamination Introduced During Ion Implantation - S. Biswas; F. McQuillan; S. Littlewood; I. Kelly; M. Edgell; V. Chia; A.J. Murrell and M.T. Wauk PA102
• Angle-Resolved Imaging of Single-Crystal Materials with MeV Helium Ions - M.D. Strathman; S. Baumann PA007
• Anomalous Diffusion of Nitrogen in Nitrogen-Implanted Silicon - R.S. Hockett PA049
• Application of Molecular Dynamics for Low Energy Ion Implantation in Crystalline Silicon - H.Y. Chan; M.P. Srinivasan; N.J. Montgomery; C.P.A. Mulcahy; S. Biswas; H.J.L. Gossmann; M. Harris; K. Nordlund; F. Benistant; C.M. Ng; D. Gui and L. Chan PA101
• Atomically Layered Heteroepitaxial Growth of Single-Crystal Films of Superconducting Bi₂Sr₂Ca₂Cu₃O_x - J.N. Erickson; I. Bozovic; K.E. von Dessonneck; D.G. Schlom; J.S. Harris, Jr.; S.M. Baumann PA008
• Boron Chemistry and Quantification in Low Energy Boron Implanted Silicon by X-ray Photoelectron Spectroscopy PA110.pdf
• Catalyst Characterization: Silica Overlayers on Transition Metals- R.H. Fleming; S.M. Baumann; G.P. Meeker; W.F. Maier PA011
• Catalytic C-H Bond Activation on Silicon Dioxide Overlayers - A.B. McEwen; W.F. Maier; R.H. Fleming; S.M. Baumann PA012
• Catalytic Dehydrogenation of Cyclohexene on Silica Overlayer Films - J.M. Cogen; K. Ezaz-Nikpay; R.H. Fleming; S.M. Baumann; W.F. Maier PA013
• Chapter 10: Contamination Monitoring and Failure Analysis by ToF-SIMS - T. Fister; T. Schuerlein; P. Lindley PA021
• Characterization of Amorphous by Secondary Ion Mass Spectrometry - Y. Li; S. Wang; X. Lin; L. Wei PA015
• Characterization of Ceramic Materials by TXRF - R.S. Hocketett; J.M. Metz PA014
• Characterization of GE Outdiffusion and Si Cap Thickness in Strained Si/SiGe Structures by SIMS - R.S. Hockett; G. Goodman; S.P. Smith; P.B. Merrill PA080