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Posters

Application of Deconvolution to Boron Depth Profiling in SiGe Hetero Structures - M.H. Yang; G.G. Goodman PS710
Characterization of Amorphous Silicon by Secondary Ion Mass Spectrometry - Y. Li; S. Wang; X. Lin; L. Wei PS701
Characterization of P-type Dopants in III-Nitrides by SIMS - R.S. Hockett; P. Van Lierde; C. Tian PS703
Dose and Oxide Thickness Determination by XPS of Plasma-Implanted P in Si - W. Nieveen PS709
Interface Oxides in Ozone-Based ALD Grown High-K Dielectric Layers on Si - W. Nieveen PS704
Measurements of Ti-Containing Barrier Materials and Low-K Dielectric Films Using Backside Polishing SIMS - M.H. Yang; J. Lan; I. Mowat; R. Humayun; J. Sun PS706
Quality Assurance of Photovoltaic Materials by Direct Sampling High Mass Resolution Glow-Discharge Mass Spectrometry Methods PS716
Quantitative Measurement of Dopants (sub-ppba), Oxygen and Carbon (sub-ppma), and Metals (sub-ppma) in PV Si Feedstock and Wafers by SIMS PS715
SIMS Analysis of Nitrogen in Various Metals and ZnO - Y. Li; S. Wang; S.P. Smith PS708
SIMS Measurements of Metal Contamination in SOI - M.H. Yang; A. Wang; M. Neuburger; R.S. Hockett PS707
SIMS Measurements of Silicon Carbide PS712
The Unique Application of AFM/SCM-2D-Carrier Profiling Through Thick Insulating Layers - K. Chao PS702
TOF-SIMS Imaging Applications in the Pharmaceutical and Food Industries - K. Wolf PS711
Ultra Shallow Profiling Using SIMS: Estimating Junction Depth Error Using Mathematical Deconvolution - M.H. Yang; I.A. Mowat; I.M. Abdelrehim PS705

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