Secondary Ion Mass Spectrometry (SIMS)

Secondary Ion Mass Spectrometry (SIMS) is an analytical technique that detects very low concentrations of dopants and impurities. It can provide elemental depth profiles over a depth range from a few angstroms to tens of microns. SIMS works by sputtering the sample surface with a beam of primary ions. Secondary ions formed during the sputtering are extracted and analyzed using a mass spectrometer. These secondary ions can range from matrix levels down to sub-parts-per-million trace levels.

Evans Analytical Group® (EAG) is the industry standard for SIMS analysis, offering the best detection sensitivity along with accurate concentration and layer structure identification. No other analytical laboratory can match EAG’s depth and breadth of experience and dedication to research and development in the SIMS field. We have the largest range of SIMS instruments worldwide, highly qualified scientists, and the world’s largest reference material library of ion-implanted and bulk-doped standards for accurate SIMS quantification. Plus, we have been doing SIMS longer than any other commercial laboratory. 

Our analysts are also adept at understanding our client’s needs and designing an analysis to most effectively address all of your concerns and interests. In fact, EAG regularly uses SIMS to help customers across a range of industries with R&D, quality control, failure analysis, troubleshooting, and process monitoring and development. We also make sure you have person-to-person service throughout the process, so that you understand the test results and the implications.

EAG’s SIMSview™: SIMS Data Processing Software

View Application Notes

Ideal Uses for SIMS Analysis		Relevant Industries for SIMS Analysis
Dopant and impurity depth profiling Composition and impurity measurements of thin films (metal, dielectric, SiGe, III-V, and II-V) Ultra-high depth resolution profiling of shallow implants and ultra thin films (ULE implants and gate oxides) Bulk analysis, including B, C, O, and N in Si High-precision matching of process tools (ion implanters)		Semiconductor (primary) Aerospace Automotive Compound Semiconductor Data Storage Defense Displays Electronics Lighting Photonics Solar Photovoltaics Telecommunications
Strengths of SIMS Analysis		Limitations of SIMS Analysis
Excellent detection sensitivity for dopants and impurities, with ppm or lower detection sensitivity Depth profiles with excellent detection limits and depth resolution   Small-area analysis (10 µm or larger) Detection of all elements and isotopes, including H Excellent dynamic range (up to 6 orders of magnitude) Stoichiometry/composition possible, in some applications		Destructive No chemical bonding information Element specific Sample must be solid and vacuum compatible

Application Notes